해외 우수한 분석, 측정, 계측기기 제조회사의 독점 대리점 !
SE200BM-SR-Solar | |
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Detector | Detector Array |
Light Source | High Power Combined DUV-Vis-NIR or Xenon Arc Light Source |
Incident Angle Change | Manual |
Stage | Automatic Mapping with X-Y configuration |
Software | |
Computer & Monitor | Intel Duo Core 2.0 GHz, 19" Wide Screen LCD |
Power | 110 - 240 VAC /50-60Hz, 6 A |
SE200BM-SR-Solar | |
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Wavelength range | 250 to 1100 nm |
Wavelength resolution | 1 nm |
Spot Size | 1 to 5 mm variable |
Incident Angle Range | 0 to 90 degree |
Incident Angle Change Resolution | 5 degree interval |
Sample Size | Up to 160x160 mm |
Substrate Size | Up to 20mm thick |
Measurable thickness range | 0 nm to 20 μm |
Measurement Time | ~ 1s/Site |
Accuracy | Better than 0.25% |
Repeatability | < 1 Å (1 sigma from 50 thickness readings for 1500 Å Thermal SiO2 on Si Wafer) |
SE200BM-SR-Solar |
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Automatic Goniometer for Incident angle changes |
Other sixe or mode Mapping Stage |
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Wavelength extension to further DUV or IR range |
Scanning Monochromator Setup |
Combined with MSP for patterned sample measurement with digital imaging functions |
45 degree tilting accessories for textured mono slicon application |
SE200BM-SOLAR |
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Amorphous, nano and crystalline Si |
Various TCO films (ITO, FTO, IZO, AZO...) |