해외 우수한 분석, 측정, 계측기기 제조회사의 독점 대리점 !

| SE200BM-SR-Solar | |
|---|---|
| Detector | Detector Array |
| Light Source | High Power Combined DUV-Vis-NIR or Xenon Arc Light Source |
| Incident Angle Change | Manual |
| Stage | Automatic Mapping with X-Y configuration |
| Software | |
| Computer & Monitor | Intel Duo Core 2.0 GHz, 19" Wide Screen LCD |
| Power | 110 - 240 VAC /50-60Hz, 6 A |
| SE200BM-SR-Solar | |
|---|---|
| Wavelength range | 250 to 1100 nm |
| Wavelength resolution | 1 nm |
| Spot Size | 1 to 5 mm variable |
| Incident Angle Range | 0 to 90 degree |
| Incident Angle Change Resolution | 5 degree interval |
| Sample Size | Up to 160x160 mm |
| Substrate Size | Up to 20mm thick |
| Measurable thickness range | 0 nm to 20 μm |
| Measurement Time | ~ 1s/Site |
| Accuracy | Better than 0.25% |
| Repeatability | < 1 Å (1 sigma from 50 thickness readings for 1500 Å Thermal SiO2 on Si Wafer) |
| SE200BM-SR-Solar |
|---|
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| Automatic Goniometer for Incident angle changes |
Other sixe or mode Mapping Stage |
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| Wavelength extension to further DUV or IR range |
| Scanning Monochromator Setup |
| Combined with MSP for patterned sample measurement with digital imaging functions |
| 45 degree tilting accessories for textured mono slicon application |
| SE200BM-SOLAR |
|---|
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| Amorphous, nano and crystalline Si |
Various TCO films (ITO, FTO, IZO, AZO...) |