해외 우수한 분석, 측정, 계측기기 제조회사의 독점 대리점 !

| SE200BM-M450 | |
|---|---|
| Detector | Detector Array |
| Light Source | High Power DUV-Vis-NIR Combined Light Source |
| Incident Angle Change | Preset at 70 degree (but manaully adjustable) |
| Stage | 450mm Automatic Mapping stage with Rho-Theta configuration |
| Software | TFProbe 3.3.x |
| Computer & Monitor | Intel Duo Core 2.0 GHz, 19" Wide Screen LCD |
| Power | 110 - 240 VAC /50-60Hz, 6 A |
| SE200BM-M450 | |
|---|---|
| Wavelength range | 250 to 850 nm |
| Wavelength resolution | 1 nm |
| Spot Size | 1 to 5 mm variable |
| Incident Angle Range | 0 to 90 degree (preset at 70 degree) |
| Incident Angle Change Resolution | 5 degree interval |
| Sample Size | Up to 450 mm in diameter |
| Substrate Size | Up to 2 mm thick |
| Measurable thickness range | 0 nm to 20 μm |
| Measurement Time | ~ 1s/Site |
| Accuracy | Better than 0.25% |
| Repeatability | < 1 Å (1 sigma from 50 thickness readings for 1500 Å Thermal SiO2 on Si Wafer) |
| SE200BM-M450 |
|---|
| Photometry measurement for Reflection |
| Micro spot for measuring small area |
| Mapping X-Y Stage (X-Y mode, instead of Rho-Theta mode) |
| Wavelength extension to further DUV (190nm) or IR range (1700nm) |
| Combined with MSP for patterned sample measurement with digital imaging functions |
| SE200BM-M450 |
|---|
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| Metals, TiN, W, TaN |
Semiconductor: aSi, Poly, SiGe.... |
| Various carbon films |